| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical communication system having high reliability with respect to deterioration of a plane light-emission type semiconductor laser device. SOLUTION: In a lower semiconductor distribution Bragg reflector and an upper semiconductor distribution Bragg reflector, a low refraction index layer and a high refraction index layer, which constitute a structural layer of a long wavelength band plane light-emitting semiconductor laser device, are alternately and periodically laminated. Such a material layer that a refraction index takes a value between two layers is provided between the low refraction index layer and the high refraction index layer. This material layer varies a composition as having a slope from a composition of the high refraction index layer to a composition of the low refraction index layer, whereby the refraction index changes continuously or stepwise. Thus, the generation of a hetero barrier generated on an interface of two types of semiconductor layers which constitute the semiconductor Bragg reflector is prevented, thereby lowering electric resistance of the Bragg reflector. Such the material layer can be formed by controlling a gas flow rate when forming the layers.
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