| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas-phase stacking device which can improve coverage and embedding property, even if the aspect ratio of a recess is high, when stacking metal in the recess, such as a hole or the like provided at the topside of a substrate. SOLUTION: For a gas-phase stacker 1, a sputtering target 13 and a susceptor 15 are counterposed within a chamber 10 where a semiconductor wafer W is stored, and further an electrode pair 3 consisting of electrodes 3a and 3b is provided above the periphery of the susceptor 15. Moreover, electrodes 3a and 3b are connected to a power controller 4. This gas-phase stacker 1 applies pulse-form DC voltages at different voltage values to the electrodes 3a and 3b, when forming a sheed layer by sputtering metal from the sputter target 13. Hereby, an AC electric field is generated between the electrodes, and it becomes easy for sputtered ionic active seeds to reach the interior of the recess of the semiconductor wafer W, and biased to meandering.
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