发明名称 METHOD OF FORMING SEMICONDUCTOR FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ELECTRO-OPTICAL DEVICE, AND APPARATUS USED FOR EXECUTING THE METHODS, AND THE SEMICONDUCTOR DEVICE AND ELECTRON-OPTICAL DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a method which can form a polycrystalline or monocrystalline semiconductor thin film, such as polycrystalline silicon of high crystallization percentage and high quality, etc., easily and at low cost and with large area, and a device to put this method into practice. SOLUTION: A formation method for a polycrystalline (or monocrystalline) semiconductor thin film or a manufacturing method for a semiconductor device, and a device to put it into practice, includes a step where a polycrystalline (or monocrystalline) semiconductor film 7 is obtained, by accelerating the crystallization of a low-class crystalline semiconductor film 7A by the heating or cooling in fusion or half fusion, or non-fusion state by applying flash lamp annealing to this low-class crystalline semiconductor film 7A after forming the low-class semiconductor film 7A on a substrate 1, when forming the polycrystalline (or monocrystal) semiconductor film 7, such as a polycrystalline silicon film of high crystallization percentage and large grain diameter, etc., on the substrate 1 or when manufacturing the semiconductor device, having a polycrystalline (or monocrystal) semiconductor film 7 on the substrate 1.</p>
申请公布号 JP2002252174(A) 申请公布日期 2002.09.06
申请号 JP20010368624 申请日期 2001.12.03
申请人 SONY CORP 发明人 YAMANAKA HIDEO
分类号 G02F1/1368;H01J9/02;H01J29/04;H01J29/96;H01J31/12;H01L21/20;H01L21/26;H01L21/336;H01L29/786;H01L31/04;(IPC1-7):H01L21/20;G02F1/136 主分类号 G02F1/1368
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