摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method which can form a polycrystalline or monocrystalline semiconductor thin film, such as polycrystalline silicon of high crystallization percentage and high quality, etc., easily and at low cost and with large area, and a device to put this method into practice. SOLUTION: A formation method for a polycrystalline (or monocrystalline) semiconductor thin film or a manufacturing method for a semiconductor device, and a device to put it into practice, includes a step where a polycrystalline (or monocrystalline) semiconductor film 7 is obtained, by accelerating the crystallization of a low-class crystalline semiconductor film 7A by the heating or cooling in fusion or half fusion, or non-fusion state by applying flash lamp annealing to this low-class crystalline semiconductor film 7A after forming the low-class semiconductor film 7A on a substrate 1, when forming the polycrystalline (or monocrystal) semiconductor film 7, such as a polycrystalline silicon film of high crystallization percentage and large grain diameter, etc., on the substrate 1 or when manufacturing the semiconductor device, having a polycrystalline (or monocrystal) semiconductor film 7 on the substrate 1.</p> |