| 摘要 |
<p>The fine patterning of a wiring film, enhancement of an outer shape precision, and facilitation of manufacture by loading a fine ball electrode of a CSP (chip size package) or BGA (ball grid array) type semiconductor device. Wiring films (4) are formed over one surface section of a base (5) comprising an insulating resin so that the film may be located flush with the base with at least a partial wiring film superposed on an electrode forming hole (8) of the base. Each electrode forming hole (8) is filled with a conductive material to form an external electrode (6) protruding out of the side face of its opposite wiring film. A semiconductor element (14) is connected by the flip chip method on the one surface of the base (5).</p> |
