| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing method of a piezoelectric oxide single-crystal wafer which reduces surface sagging of a wafer surface form and makes the thickness irregularities in a wafer center part and a peripheral part small, regarding a piezoelectric oxide single-crystal wafer to be used in an elastic surface wave device or the like, and a piezoelectric oxide single-crystal wafer in which thickness irregularities are small. SOLUTION: In the polishing method of a piezoelectric oxide single-crystal wafer, abrasive agent is supplied to an abrasive cloth, while a surface plate on which the abrasive cloth is stuck is rotated, and a wafer surface is brought into slidably into contact with the abrasive cloth while a wafer is rotated, thereby polishing the piezoelectric oxide single-crystal wafer. In the course of the wafer polishing, dressing is performed at least one time, thereby eliminating the abrasive agent and abrasive scrap which are loaded in the abrasive cloth. By using this polishing method, the title piezoelectric oxide single-crystal wafer is polished. |
