发明名称 |
CHEMICAL AMPLIFICATION TYPE RESIST COMPOSITION |
摘要 |
PROBLEM TO BE SOLVED: To provide a chemical amplification type resist composition excellent in transmittance to light of <=170 nm wavelength and suitable particularly for F2 excimer laser lithography. SOLUTION: The chemical amplification type resist composition contains a radiation sensitive acid generating agent which generates an acid when exposed with radiation of <=170 nm and a binder resin which is alkali-soluble or undergoes a chemical change by the action of the radiation sensitive acid generating agent after irradiation with radiation and becomes alkali-soluble and has a polymerization unit in which a linking group is an ether bond. |
申请公布号 |
JP2002251014(A) |
申请公布日期 |
2002.09.06 |
申请号 |
JP20010051724 |
申请日期 |
2001.02.27 |
申请人 |
SUMITOMO CHEM CO LTD |
发明人 |
MIYA YOSHIKO;YOSHIDA ISAO;KAMIYA YASUNORI |
分类号 |
G03F7/039;C08K5/00;C08L71/00;G03F7/004;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|