发明名称 CHEMICAL AMPLIFICATION TYPE RESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a chemical amplification type resist composition excellent in transmittance to light of <=170 nm wavelength and suitable particularly for F2 excimer laser lithography. SOLUTION: The chemical amplification type resist composition contains a radiation sensitive acid generating agent which generates an acid when exposed with radiation of <=170 nm and a binder resin which is alkali-soluble or undergoes a chemical change by the action of the radiation sensitive acid generating agent after irradiation with radiation and becomes alkali-soluble and has a polymerization unit in which a linking group is an ether bond.
申请公布号 JP2002251014(A) 申请公布日期 2002.09.06
申请号 JP20010051724 申请日期 2001.02.27
申请人 SUMITOMO CHEM CO LTD 发明人 MIYA YOSHIKO;YOSHIDA ISAO;KAMIYA YASUNORI
分类号 G03F7/039;C08K5/00;C08L71/00;G03F7/004;H01L21/027 主分类号 G03F7/039
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