发明名称 INFRARED DETECTION ELEMENT AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a high-sensitivity infrared detection element, using a bolometer layer, having a high resistance-temperature coefficient at room temperature and a low resistance value. SOLUTION: In this bolometer-type infrared detection element, having a light-receiving part supported by bridge parts on a silicon substrate, the light- receiving part includes a wiring layer formed so as to extend through the bridge parts to the light-receiving part, electrode parts electrically connected to the wiring layer, and the bolometer layer formed over the electrode parts. The bolometer layer comprises a layer, composed mainly of a prescribed NTC(negative temperature coefficient) thermistor material.
申请公布号 JP2002250655(A) 申请公布日期 2002.09.06
申请号 JP20010050150 申请日期 2001.02.26
申请人 MITSUBISHI ELECTRIC CORP 发明人 HIGUMA HIROKO;MIYASHITA SHOJI
分类号 G01J1/02;G01J5/02;G01J5/20;H01L27/14;H01L37/02;(IPC1-7):G01J1/02 主分类号 G01J1/02
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