发明名称 |
Semiconductor device and method of producing the same |
摘要 |
A semiconductor device of the present invention includes a systematic structure layer of first conductivity type and having a systematically arranged structure. The systematic structure layer is formed on a collector contact layer of first conductivity type, which is connected to collector electrodes. A compensation layer of first conductivity type is formed on the systematic structure layer. A collector layer of first conductivity type is formed on the compensation layer. A base layer is formed on the collector layer and connected to base electrodes. An emitter layer is formed on the base electrode and connected to an emitter electrode. The semiconductor device reduces collector resistance and thereby improves reliability.
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申请公布号 |
US2002121675(A1) |
申请公布日期 |
2002.09.05 |
申请号 |
US20020084233 |
申请日期 |
2002.02.28 |
申请人 |
AZUMA KOUJI;MIYOSHI YOUSUKE;HARIMA FUMIO;TANOMURA MASAHIRO;SHIMAWAKI HIDENORI |
发明人 |
AZUMA KOUJI;MIYOSHI YOUSUKE;HARIMA FUMIO;TANOMURA MASAHIRO;SHIMAWAKI HIDENORI |
分类号 |
H01L21/331;H01L29/737;(IPC1-7):H01L27/082 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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地址 |
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