发明名称 |
Method for fabricating group III-V compound semiconductor substrate |
摘要 |
Provided is a compound semiconductor substrate fabrication method involving: preparing a base substrate; forming a first buffer layer on the prepared base substrate; forming a semiconductor layer on the first buffer layer; and removing the base substrate.
|
申请公布号 |
US2002123157(A1) |
申请公布日期 |
2002.09.05 |
申请号 |
US20020086892 |
申请日期 |
2002.03.04 |
申请人 |
SAMSUNG CORNING CO., LTD. |
发明人 |
LEE KYO-YEOL |
分类号 |
C30B29/38;C30B25/02;C30B25/18;H01L21/18;H01L21/20;H01L21/205;(IPC1-7):H01L21/00 |
主分类号 |
C30B29/38 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|