SEMICONDUCTOR MEMORY AND INFORMATION READ-OUT METHOD THEREFOR

摘要

PURPOSE: To provide an information read-out method for a semiconductor memory, in which characteristics can be improved. CONSTITUTION: When voltages of word lines WL0, WL1 become voltage or above necessary for reading 0-information from memory cells 18a-19b, dummy word lines DWL0, DWL1 are activated, potentials of bit lines BL0, /BL0, BL1, /BL1 are raised by dummy cells 23a-24b connected to this dummy word line DWL0, DWL1. Then sense amplifiers 20a, 20b are activated before 1-information is read out from the memory cells 18a-19b.