发明名称 |
Chemical vapor deposition methods and methods of etching a contact opening over a node location on a semiconductor substrate |
摘要 |
A chemical vapor deposition method includes providing a semiconductor substrate within a chemical vapor deposition chamber. At least one liquid deposition precursor is vaporized with a vaporizer to form a flowing vaporized precursor stream. The flowing vaporized precursor stream is initially bypassed from entering the chamber for a first period of time while the substrate is in the deposition chamber. After the first period of time, the flowing vaporized precursor stream is directed to flow into the chamber with the substrate therein under conditions effective to chemical vapor deposit a layer over the substrate. A method of etching a contact opening over a node location on a semiconductor substrate is disclosed.
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申请公布号 |
US2002123221(A1) |
申请公布日期 |
2002.09.05 |
申请号 |
US20010797898 |
申请日期 |
2001.03.01 |
申请人 |
JOST MARK E.;HILL CHRIS W. |
发明人 |
JOST MARK E.;HILL CHRIS W. |
分类号 |
H01L21/311;H01L21/316;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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