| 发明名称 |
Method of making trench-gated MOSFET having cesium gate oxide layer |
| 摘要 |
Cesium is implanted into the gate oxide layer of a vertical trench-gated MOSFET. The cesium, which is an electropositive material, reduces the threshold voltage of the device and lowers the on-resistance by improving the accumulation region adjacent the bottom of the trench.
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| 申请公布号 |
US2002123196(A1) |
申请公布日期 |
2002.09.05 |
| 申请号 |
US20020094476 |
申请日期 |
2002.03.07 |
| 申请人 |
CHANG MIKE;LUI SIK;TAI SUNG-SHAN |
发明人 |
CHANG MIKE;LUI SIK;TAI SUNG-SHAN |
| 分类号 |
H01L21/28;H01L21/3115;H01L29/423;H01L29/51;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
| 代理机构 |
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| 主权项 |
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