| 发明名称 |
Rearrangement sheet, semiconductor device and method of manufacturing thereof |
| 摘要 |
There are provided a semiconductor device construction having more degrees of design freedom of the semiconductor element than prior arts, and a method of manufacturing such device easily and at low cost. For this purpose, a rearrangement sheet is employed provided with an insulating sheet and conductive metallic patterns formed on this insulating sheet.
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| 申请公布号 |
US2002121686(A1) |
申请公布日期 |
2002.09.05 |
| 申请号 |
US20010930710 |
申请日期 |
2001.08.16 |
| 申请人 |
UCHIDA YASUFUMI;SAEKI YOSHIHIRO |
发明人 |
UCHIDA YASUFUMI;SAEKI YOSHIHIRO |
| 分类号 |
H01L23/12;H01L21/60;H01L23/31;H01L23/495;H01L23/498;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L23/02 |
主分类号 |
H01L23/12 |
| 代理机构 |
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