| 摘要 |
The present invention relates to a method for manufacturing a semiconductor device from a step of thinning a semiconductor device substrate to a step of dicing it, and a semiconductor device. The method for manufacturing a semiconductor device substrate of the present invention is characterized by carrying out a series of processes from a step of uniformly thinning a whole surface of a semiconductor device substrate to a step of back-metal plating, while the semiconductor device substrate is unified with a dummy substrate. Therefore, the present invention allows a semiconductor device to be manufactured without breaking the thinned semiconductor device substrate even after the thinned substrate is separated from the dummy substrate.
|
