Semiconductor device having a voltage-regulator device

摘要

A semiconductor device providing an improved effect of suppressing variation with time of reverse breakdown voltage applied to PH junction, particularly, a voltage-regulator device, is provided. The semiconductor device includes an impurity diffusion layer 15 formed on a surface of a certain-conductivity-type semiconductor substrate or well, the impurity diffusion layer having a conductivity opposite to that of the semiconductor substrate or well, and a device separating insulation film 12 formed at a distance from the impurity diffusion layer, and a distance between an end of the impurity diffusion layer and an end of the device separating insulation film is defined to be not less than 1.2 mum.