发明名称 |
GROWTH METHOD FOR A CRYSTALLINE STRUCTURE |
摘要 |
<p>The invention relates to a method for growing a crystalline structure on a substrate (16) that has an at least partially crystalline surface (40), using a source material (18) that contains at least one element that can be applied to the crystalline surface to from a crystalline structure, whereby the source material is provided in a solid state while the method is carried out and also has a surface extension that corresponds at least substantially to that of the substrate (16), being arranged in an opposite, parallel position thereto, whereby the source material (18) has a larger, effective surface on account of its porosity and/or surface structure than that of the substrate and whereby at least the source material is heated to a temperature below the melting point thereof.</p> |
申请公布号 |
EP1133593(B1) |
申请公布日期 |
2002.09.04 |
申请号 |
EP19990958012 |
申请日期 |
1999.11.09 |
申请人 |
BAYERISCHES ZENTRUM FUER ANGEWANDTE ENERGIEFORSCHUNG E.V. ZAE BAYERN |
发明人 |
BRENDEL, ROLF;KUCHLER, GREGOR;ACKERMANN, JOERG;AUER, RICHARD |
分类号 |
C30B25/02;C30B25/22;H01L21/20;H01L21/205;H01L31/0236;H01L31/18;(IPC1-7):C30B25/22 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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