发明名称 |
Method of fabricating a mask for extreme ultraviolet radiation |
摘要 |
<p>An EUV photolithographic mask device and a method of fabricating the same. The EUV photolithographic mask comprises a multi-layer over an EUV masking substrate and a patterned light absorbing layer formed on the multi-layer. The method comprises the steps of forming a multi-layer on an EUV mask substrate, forming a light absorbing layer on the multi-layer, and etching an opening through the light absorbing layer to the multi-layer. The light absorbing layer includes a metal selected from the group comprising nickel, chromium, cobalt, and alloys thereof, and is preferably nickel.</p> |
申请公布号 |
EP1237041(A2) |
申请公布日期 |
2002.09.04 |
申请号 |
EP20020368019 |
申请日期 |
2002.02.20 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING, INC. |
发明人 |
SUBHASH, GUPTA;MEI-SHENG, SHOU |
分类号 |
G03F1/24;G03F1/54;H01L21/027;H01L21/302;H01L21/3065;(IPC1-7):G03F1/14 |
主分类号 |
G03F1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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