| 摘要 |
PURPOSE: To provide a method for readily using a salicide technology as to a method for manufacturing a semiconductor device for suppressing an increase in wiring resistance of a gate electrode, by replacing the gate electrode with a metallic material. CONSTITUTION: A barrier layer is formed by oxidizing a antireflection film which is stacked before a resist application for preventing a constriction on a transfer pattern formed at the time of optical pattern transfer of a photoresist.
|
