| 摘要 |
PURPOSE: A silicon thin film structure for a photoelectric device is provided to increase overall light radiating efficiency, by interposing undoped pure silica layer between a silicon layer and a silica layer doped with erbium so that radiating light absorbed by the silicon layer is controlled. CONSTITUTION: An undoped lower silica buffer layer(202) controls the radiating light absorbed by silicon, formed on a silicon base layer(201). A silica light radiating layer is formed on the undoped lower silica buffer layer, doped with a predetermined rare earth element for the light radiation. An undoped upper silica buffer layer(204) controls the absorbtion of light radiation of silicon, formed on the doped silica light radiating layer. The silicon thin film structure is formed of a multilayered stacked structure composed of the silicon layer, the undoped silica layer, the doped silica layer and the undoped silica layer.
|
