发明名称 Semiconductor integrated circuit having an improved grounding structure
摘要 In a semiconductor integrated circuit, a ground plane conductor 3 is formed in a substrate 9 to oppose to a conducting line 2 formed on the substrate, so as to form a microstrip line. A decoupling capacitor 1 is provided on the substrate 9 and is electrically connected between the conducting line 2 and the ground plane conductor 3 so as to bypass a high frequency current component flowing through the conducting line to the ground plane conductor. Thus, the impedance of the conducting line 2 is stabilized, and a path of a feedback current of a high frequency current component flowing through the conducting line 2 is ensured by the ground plane conductor 3, so that a current loop is minimized, resulting in minimized electromagnetic noises radiated from the current loop. <IMAGE>
申请公布号 EP1024536(A3) 申请公布日期 2002.09.04
申请号 EP20000101721 申请日期 2000.01.27
申请人 NEC CORPORATION 发明人 YOSHIDA, SHIRO
分类号 H01L21/768;H01L21/822;H01L23/522;H01L27/04;H01L27/08;(IPC1-7):H01L27/02 主分类号 H01L21/768
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