| 摘要 |
A surface emitting semiconductor laser capable of controlling the polarization direction of laser light and a surface emitting semiconductor laser array. In a surface emitting semiconductor laser 100, a resonator 120 is formed on a semiconductor substrate 101 in the perpendicular direction, from which light is emitted in the direction perpendicular to the semiconductor substrate 101. The surface emitting semiconductor laser 100 includes a columnar portion 110, which is part of the resonator 120, and an insulating layer 112 formed in contact with the side of the columnar portion 110, wherein the insulating layer 112 exhibits anisotropic stress caused by the planar configuration thereof, and the polarization direction of laser light is controlled by the anisotropic stress. <IMAGE> |
