| 摘要 |
1287110 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 17 Dec 1969 [20 Dec 1968] 61515/69 Heading H1K An integrated circuit comprises a wafershaped semi-conductor body with circuit elements adjoining one surface thereof, and capacitor on the other surface of the body, one plate of the capacitor being formed either by the surface portion of the body, or a metal layer on the surface, a dielectric layer being provided on the plate, and a metal layer, forming the second plate, on the dielectric layer, the voltage supply to the circuit being connected to the capacitor plates. In the embodiment in which the first plate comprises a metal layer, the dielectric may be formed from the oxide of the metal layer by anodic oxidation. The metal may be of aluminium or tantalum, and the dielectric in the other embodiment be of silicon dioxide. |
