| 摘要 |
An apparatus and method for supplying bi-directional load current to a load device. Four current sensing metal oxide semiconductor field effect transistors are operably configured to form an H-bridge with the load device, each transistor having separately insulated gate, source and drain and sense terminals with a source to drain conductivity determined in relation to a voltage applied to the gate terminal and a sense current from the sense terminal determined in relation to a magnitude of source to drain current. Drive voltages are applied to the gate terminals of alternating pairs of the transistors to apply the load current to the load device. The sense currents are used to provide adaptive, closed-loop clamping of the drive voltages at levels sufficient to maintain the non-load current conducting transistors in a quiescent state. |
