| 摘要 |
A semiconductor device comprising: a first interconnect layer 1 comprising a first electrode 10 and a second electrode 20 with a plurality of a tooth-shaped teeth 11, 21 and a connection portion 12, 22 for connecting the plurality of teeth, the first electrode 10 and the second electrode 20 being disposed in a mutually staggered fashion from opposite directions; a second interconnect layer 2 comprising a third electrode 30 and a fourth electrode 40 with a plurality of tooth-shaped teeth 31, 41 and a connection portion 32, 42 for connecting the plurality of teeth, the third electrode 30 and the fourth electrode 40 being disposed in mutually staggered fashion from opposite directions; wherein the teeth 11 of the first electrode 10 overlap with either teeth 31 of the third electrode 30 or teeth 41 of the fourth electrode 40, and the electrodes are connected so that potentials on the overlapping teeth are different. |
