发明名称 Polishing process for use in method of fabricating semiconductor device
摘要 First, in a primary polishing step, a substrate is brought into close contact with a first pad including abrasives and made of a hard material, and the first pad is rotated while a first solution containing no abrasive is supplied onto the first pad to polish a surface of the substrate. In the primary polishing step, since the first solution contains no abrasive and the first pad is hard, polishing is performed with high flatness and extremely less dishing and erosion. Next, in a secondary polishing step, the substrate is brought into close contact with a second pad including no abrasive and made of a soft material, and the second pad is rotated while a second solution containing abrasives is supplied onto the second pad to polish the surface of the substrate. In the secondary polishing step, since the second solution contains the abrasives and the second pad is soft, scratches produced in the primary polishing step are reduced.
申请公布号 US6443807(B1) 申请公布日期 2002.09.03
申请号 US20000702673 申请日期 2000.11.01
申请人 NEC CORPORATION 发明人 SAKAI TETSUYA;TSUCHIYA YASUAKI
分类号 B24B37/00;B24B37/04;B24B37/20;B24B37/24;B24D3/22;H01L21/304;H01L21/3105;H01L21/3205;H01L21/321;H01L21/768;(IPC1-7):B24B1/00 主分类号 B24B37/00
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