发明名称 |
Semiconductor apparatus and method for fabricating the same |
摘要 |
First, a substrate, on which a plurality of semiconductor devices is formed, is provided. Next, a first etching treatment is carried out to the substrate with a first etching gas comprising CF4 to form a base trench having a rounded-off upper edge or tapered upper edge. A second etching treatment is carried out to the substrate to form a trench region at the base trench so that the trench region has a rounded-off upper edge. And then, an insulating layer is formed on the substrate to fill up the trench region therewith.
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申请公布号 |
US6444540(B2) |
申请公布日期 |
2002.09.03 |
申请号 |
US20010864201 |
申请日期 |
2001.05.25 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD |
发明人 |
KAWADA SHINZI;KAWANO HIROYUKI |
分类号 |
H01L21/302;H01L21/3065;H01L21/76;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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