发明名称 |
Method of manufacturing a flash memory device with an antidiffusion region between well regions |
摘要 |
There is disclosed a method of manufacturing a flash memory device. In order to solve the problems that a break down voltage between wells is reduced and an insulating characteristic between the wells is lowered due to degraded barrier characteristic between the wells, in a flash memory device employing a triple well structure, the present invention forms an anti-diffusion region for preventing diffusion of dopants between a P-well region and a N-well region by nitrogen ion implantation, thus improving the electrical characteristic of the device.
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申请公布号 |
US6444522(B1) |
申请公布日期 |
2002.09.03 |
申请号 |
US20000716416 |
申请日期 |
2000.11.21 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
CHO BYUNG HEE;KWAK NOH YEAL |
分类号 |
H01L21/265;H01L21/8247;H01L27/08;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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