| 发明名称 |
High performance poly-si1-xgex thin film transistor and a method of fabricating such a thin film transistor |
| 摘要 |
The present invention pertains to a high-performance thin film transistor having a gate and an active region, whose active region comprises a poly-Si1-xGex alloy material and a channel layer of silicon, in which the channel layer of silicon is interposed between the poly-Si1-xGex alloy material and the gate, and a method for fabricating such a high-performance thin film transistor.
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| 申请公布号 |
US6444509(B1) |
申请公布日期 |
2002.09.03 |
| 申请号 |
US19970997326 |
申请日期 |
1997.12.23 |
| 申请人 |
SONY CORPORATION;MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
NOGUCHI TAKASHI;REIF RAFAEL;TSAI JULIE;TANG ANDREW J. |
| 分类号 |
H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
H01L21/20 |
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