发明名称 |
Methods, complexes, and system for forming metal-containing films |
摘要 |
A method of forming a film on a substrate using Group III metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
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申请公布号 |
US6444041(B2) |
申请公布日期 |
2002.09.03 |
申请号 |
US20010943146 |
申请日期 |
2001.08.30 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
VAARTSTRA BRIAN A. |
分类号 |
C07F5/00;C07F5/06;C23C16/18;C23C16/30;H01L21/285;H01L21/768;(IPC1-7):C23C16/00 |
主分类号 |
C07F5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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