发明名称 |
Process for making fine pitch connections between devices and structure made by the process |
摘要 |
A semiconductor device structure including fine-pitch connections between chips is fabricated using stud/via matching structures. A stud is provided on the front surface of the chip, and a layer with interconnection wiring is formed on a transparent plate. The wiring layer includes a conducting pad on a surface thereof opposite the plate. A second layer is formed on top of the wiring layer, with a via formed therein to expose the conducting pad. The stud and via are then aligned and connected; the front surface of the chip thus contacts the second layer and the stud makes electrical contact with the conducting pad. A chip support is then attached to the device. An interface between the wiring layer and the plate is exposed to ablating radiation; the plate is then detached and removed. This method permits interconnection of multiple chips (generally with different sizes, architectures and functions) at close proximity and with very high wiring density.
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申请公布号 |
US6444560(B1) |
申请公布日期 |
2002.09.03 |
申请号 |
US20000669531 |
申请日期 |
2000.09.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
POGGE H. BERNHARD;PRASAD CHANDRIKA;YU ROY |
分类号 |
H01L21/68;H01L21/98;H01L23/538;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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