Semiconductor device and method of fabricating the same

摘要

First and second transistors are formed on the principal surface of the semiconductor substrate, and an insulating film is formed over the principal surface of the semiconductor substrate so as to cover the first and second transistors. A first storage node is connected to the first transistor and has a first enclosed wall structure which is formed over the insulating film and encloses a surface region of the insulating film. A second storage node is connected to the second transistor and has second enclosed wall structure which is formed over the insulating film and surrounds the first enclosed wall structure. A capacitor insulating film covers the first and second enclosed wall structures, and a cell-plate is formed on the capacitor insulating film.