发明名称 Method and apparatus for controlling a plating process
摘要 A method for controlling a plating process includes plating a process layer on a wafer in accordance with a recipe; measuring a thickness of the process layer; and determining at least one plating parameter of the recipe for subsequently formed process layers based on the measured thickness. A processing line includes a plating tool, a metrology tool, and a process controller. The plating tool is adapted to form a process layer on a wafer in accordance with a recipe. The metrology tool is adapted to measure a thickness of the process layer. The process controller is adapted to determine at least one plating parameter of the recipe for subsequently formed process layers based on the measured thickness.
申请公布号 US6444481(B1) 申请公布日期 2002.09.03
申请号 US20010897626 申请日期 2001.07.02
申请人 ADVANCED MICRO DEVICES, INC. 发明人 PASADYN ALEXANDER J.;SONDERMAN THOMAS J.
分类号 C25D7/12;C25D21/12;H01L21/288;H01L21/3205;H01L21/66;H01L21/768;H01L23/52;(IPC1-7):H01L21/00 主分类号 C25D7/12
代理机构 代理人
主权项
地址