发明名称 |
Method and apparatus for controlling a plating process |
摘要 |
A method for controlling a plating process includes plating a process layer on a wafer in accordance with a recipe; measuring a thickness of the process layer; and determining at least one plating parameter of the recipe for subsequently formed process layers based on the measured thickness. A processing line includes a plating tool, a metrology tool, and a process controller. The plating tool is adapted to form a process layer on a wafer in accordance with a recipe. The metrology tool is adapted to measure a thickness of the process layer. The process controller is adapted to determine at least one plating parameter of the recipe for subsequently formed process layers based on the measured thickness.
|
申请公布号 |
US6444481(B1) |
申请公布日期 |
2002.09.03 |
申请号 |
US20010897626 |
申请日期 |
2001.07.02 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PASADYN ALEXANDER J.;SONDERMAN THOMAS J. |
分类号 |
C25D7/12;C25D21/12;H01L21/288;H01L21/3205;H01L21/66;H01L21/768;H01L23/52;(IPC1-7):H01L21/00 |
主分类号 |
C25D7/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|