| 摘要 |
The present invention relates to a method of manufacturing a semiconductor device, including the steps of providing a silicon-on-insulator semiconductor wafer having a silicon film formed on an insulator layer; forming a semiconductor device in the silicon film, the semiconductor device including a semiconductor element, an interlayer dielectric over the semiconductor device, and at least one opening passing through the interlayer dielectric and in communication with the semiconductor element; implanting inert atoms into the semiconductor element by passing the inert atoms through the opening at an energy and at a dose sufficient to form a damaged region in the semiconductor element, wherein the oxide insulating layer acts as a mask to block implantation of the inert atoms into other portions of the semiconductor device, and the damaged region comprises gettering sites; and subjecting the semiconductor device to conditions to getter at least one impurity into the gettering sites from adjacent portions of the semiconductor device.
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