发明名称
摘要 PROBLEM TO BE SOLVED: To obtain a module structure using a thin semiconductor device, by a method wherein one out of mutually opposite outer leads of two line arrayed semiconductor devices is made positive bending outer lead while the other one is made negative bending outer lead. SOLUTION: For example, in the case of two stage laminated thin semiconductor devices are arrayed in dual line, one thin semiconductor devices (A), (B) have positive bent outer leads 2B, while the other thin semiconductor devices (C), (D) have negative bent outer leads 2B. At this time, the pin numbers of respective outer leads of the thin semiconductor devices (A), (B) and respective outer leads 2B of respective opposite thin semiconductor devices (C), (D) e.g. 1 pin-10 Pin are equalized. Accordingly, the wiring length in the case of connecting respective 1 Pin of the devices (A), (B) to the 1 Pin of the devices (C), (D) can be shortened, thereby making feasible the noise reduction and the acceleration of data collection.
申请公布号 JP3320017(B2) 申请公布日期 2002.09.03
申请号 JP19980184362 申请日期 1998.06.30
申请人 发明人
分类号 H01L25/18;H01L21/60;H01L23/50;H01L23/52;H01L25/10;H01L25/11;H05K1/18;H05K3/34 主分类号 H01L25/18
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