| 摘要 |
Upon fabrication of semiconductor devices, a semiconductor substrate is subjected to ion implantation with high energy. Subsequent annealing of the ion-implanted semiconductor substrate, when conducted by heating the substrate to a temperature of from 1,000° C. to 1,200° C. at a ramp-up rate of at least 200° C./sec, makes it possible to provide the resulting semiconductor devices with smaller leakage currents of reduced variations (sigma/X). The present invention can therefore provide a process for the fabrication of semiconductor devices featuring both smaller leakage currents and reduced variations of the leakage currents even when ion implantation is conducted with high energy.
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