| 摘要 |
A gate-insulating film of the present invention is a gate-insulating film having a polycrystalline film made of a metal oxide, in which a grain boundary plane extending in parallel with the polycrystalline film is present at the position of a predetermined thickness of the polycrystalline film and grain boundaries extending in the film-thickness direction of polycrystals configuring the polycrystalline film are discontinuous at the grain boundary plane.
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