| 摘要 |
A method for forming a patterned composite stack layer within a microelectronics fabrication. There is first provided a substrate. There is then formed over the substrate a blanket first silicon layer. There is then formed forming upon the blanket first silicon layer a blanket silicon containing dielectric layer. There is then formed upon the blanket silicon containing dielectric layer a blanket second silicon layer. There is then formed upon the blanket second silicon layer a blanket organic polymer anti-reflective coating (ARC) layer. There is then formed upon the blanket organic polymer anti-reflective coating (ARC) layer a patterned photoresist layer. Finally, there is then etched sequentially while employing the patterned photoresist layer as a photoresist etch mask the blanket organic polymer anti-reflective coating (ARC) layer, the blanket second silicon layer, the blanket silicon containing dielectric layer and the blanket first silicon layer to form a patterned composite stack layer comprising a patterned second silicon layer coextensive with a patterned silicon containing dielectric layer in turn coextensive with a patterned first silicon layer, where the sequential etching is undertaken employing a single plasma etch method employing an etchant gas composition which upon plasma activation forms a chlorine containing etchant species.
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