发明名称 |
Method of improving photoresist profile |
摘要 |
A method of improving a photoresist profile. After a photoresist layer is developed, a hard bake is performed at a temperature lower than a glass transition temperature of the photoresist layer. The photoresist layer is thus able to reflow, so that the profile can be modified. Or alternatively, the hard bake step can be replace by first performing a hard bake at a temperature higher than the glass transition temperature, followed by performing a flow bake at a temperature lower than the glass transition temperature.
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申请公布号 |
US6444410(B1) |
申请公布日期 |
2002.09.03 |
申请号 |
US20000688606 |
申请日期 |
2000.10.14 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HUANG I-HSIUNG;CHEN ANSEIME;WANG CHIEH-MING |
分类号 |
G03F7/40;(IPC1-7):G03F7/26 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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