| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor thin film photoelectric conversion device having a high photoelectric conversion efficiency at low cost and in a high production efficiency. SOLUTION: In a method of manufacturing a thin film photoelectric conversion device comprising at least one crystalline photoelectric conversion unit 3 on a substrate 1, plasma reaction gas comprises silane gas and hydrogen gas as the main components of the plasma reaction gas as the condition that an i-type crystalline photoelectric conversion device 3i is deposited by a plasma CVD method, the flow rate ratio of the hydrogen gas to the silane gas is set to 50 or more, the pressure within a plasma reaction chamber is set at a pressure to 600 Pa or higher, a heater for heating the substrate 1 within the plasma reaction chamber is not used, high-frequency power is applied to the substrate 1 in a power density of 300 mW/cm2 or higher for generating a plasma, the substrate 1 is subjected to temperature rise by a plasma effect by the application of the high-frequency power, and the highest temperature at the time of the temperature rise is controlled so as not to exceed 230 deg.C.</p> |
