| 摘要 |
PROBLEM TO BE SOLVED: To positively reduce a dark current due to thermal excitation to realize an optical sensor having a very high sensitivity. SOLUTION: The optical sensor has an MQW structure formed such that a plurality of GaAs layers 22 having quantum well potentials and a plurality of AlGaAs layers 23 having potential barriers against quantum wells are alternately grown on an n-GaAs layer 21 and an n-GaAs layer 24 for ensuring a good connection to In bumps 15 is formed as an uppermost layer. Each AlGaAs layer 23 is generally doped selectively with Si and its interface at the side of a GaAs substrate 11, as seen from the GaAs layer 22, is doped selectively with an n+ type impurity 25, thereby suppressing the growth of a dark current based on thermal excitation.
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