| 摘要 |
PROBLEM TO BE SOLVED: To achieve a higher activation rate in an ion-implanted region of a silicon carbide semiconductor device. SOLUTION: When a p-type base region 3 is formed, ions obtained by bonding molecules B and C are implanted to implant B and C at the same time. Consequently, since B, which is a p-type dopant, and C for filling C holes can be positioned close to each other from immediately after the ion implantation, B can be replaced fully, even when a little amount of C is implanted. Accordingly, a higher activation rate can be achieved, and crystal defects can be prevented due to the reduced amount of C implanted.
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