| 摘要 |
PROBLEM TO BE SOLVED: To prevent stored data from being destroyed by drop of a power source potential. SOLUTION: A semiconductor memory in which read-out and write-in are performed arbitrarily is provided with a power source potential drop detecting circuit 1 detecting drop of a power source potential, a word driver 3 and a column switch 4 cutting off a word line and a bit line from a memory cell by a power source potential drop signal 5 outputted from the power source potential drop detecting circuit 1 outputting the prescribed potential when a power source is dropped by the prescribed potential, and an address storing circuit 2 at the time of power source potential drop taking in a word side address and a column side address by the power source potential drop signal 5.
|
