| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor element in which a PN junction and a Schottky junction are arranged adjacently. SOLUTION: A plurality of insular P+ type silicon regions 15 are formed in the central surface region of an N type silicon region 12. An anode electrode 13 is provided above the P+ type silicon region 15 through an insulation film 16 having an opening 16a. The P+ type silicon regions 15 are formed at a substantially constant interval and it is also arranged at a position in the opening 16a not touching the anode electrode 13. Interval of the P+ type silicon regions 15 is set such that a substantially integrated depletion layer is formed by a PN junction which is formed between the N type silicon region 12 and the P+ type silicon region 15 upon application of a reverse voltage.</p> |
