| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a multilayer wiring structure and to provide a method for manufacturing it. SOLUTION: A semiconductor substrate 200 is formed and an interlayer insulating film 204 is formed on the semiconductor substrate 200. A first contact stud 208 the width of, whose entrance adjacent to the surface of the interlayer insulating film 204 is still larger than its contact part near the substrate 200, is formed inside the interlayer insulating film 204. A second contact stud 208b, which is spaced from the first contact stud 208 by a specified distance, is formed inside the interlayer insulating film 204. A landing pad 210, which has a width larger than that of the second contact stud 208b, is provided on the interlayer insulating film 204, in such a way that it is in contact with the surface of the second contact stud 208b. The width of the contact part and that of the entrance part of the second contact stud 208b are almost equal. At least one spacer 214 made of an etching blocking layer can be formed on both sidewalls of the landing pad 210 and an etching blocking layer 212 can be provided on the top of the landing pad 210. |
