| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain an inexpensive highly reliable field effect semiconductor device (IGBT) that can reduce the size of a substrate, can simplify a circuit, and can be reduced in power loss, and to obtain a method of manufacturing the device. SOLUTION: This field effect semiconductor device performs switching operations by using a gate voltage inputted from the outside through a gate resistance circuit 5 which limits charging and discharge currents flowing between a gate and an emitter. This semiconductor device is provided with an insulating gate electrode section composed of a gate electrode pad 2a and a gate electrode 2b insulated from the pad 2a. The gate resistance circuit 5 is inserted between the pad 2a and electrode 2b so that the circuit 5 may be formed integrally with the insulating gate electrode section. In addition, the circuit 5 is provided with a first gate resistor 6 and a first serial circuit connected in parallel with the resistor 6 and composed of a second gate resistor 8 and a first diode 7. Moreover, the anode of the first diode 7 is connected to the gate electrode 2b.</p> |
