REFLECTING TYPE EXPOSURE MASK, ITS MANUFACTURING METHOD AND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a reflecting type exposure mask capable of suppressing a positional deviation of a mask pattern and improving a contrast at a mask examining time with a DUV light without affecting an adverse influence to resolution in the mask used for an EUV lithography. SOLUTION: The reflecting type exposure mask comprises the mask pattern (5) formed on a multilayer film (2) having a relatively high reflectivity for a DUV light and having a relatively low reflectivity than that of the DUV light and formed of a tantalum oxide, an oxide of a tantalum alloy or an oxide of a nitrogen tantalum formed only on its surface vicinity part or entirely formed intentionally.