| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly bonded structure that can improve the adhesive force between an insulating layer and a semiconductor even when such a forming method that little damages the semiconductor is used for the formation of the insulating layer. SOLUTION: On the semiconductor, the highly bonded structure is provided in which an oxide layer 12 composed of the oxide of the element constituting the semiconductor, an oxide adhesive layer 16, an adhesive force generating layer 14 (including the case where this layer 14 becomes extinct), and the insulating layer 15, are laminated upon another in this order. This bonded structure can be formed by laminating the oxide layer 12, adhesive force generating layer 14, and insulating layer 15 upon another in this order. The oxide layer 12 can be formed by naturally or artificially oxidizing the element constituting the semiconductor. The adhesive force generating layer 16 is generating through a reaction between the oxygen contained in the oxide layer 12 and the constituent element of the adhesive force generating layer 14. The layer 14 contains an element to be oxidized and another element that reacts to the constituent element of the insulating layer 15.
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