| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a thin film inorganic light emitting diode. SOLUTION: In this thin film inorganic light emitting device, a luminescence center contains a dispersion of zinc sulfide and an water-compatible p-type semiconductor polymer, for which a polythiophene/polymeric polyanion complex is desirable, contained as a dopant in the state of a single/double layer.
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