| 摘要 |
PROBLEM TO BE SOLVED: To provide a horizontal JFET having a structure, with which on- resistance can be reduced while a high voltage breakdown performance is maintained, and to provide a method of manufacturing the same. SOLUTION: This horizontal JFET includes a first conductivity-type gate layer 2 on a semiconductor substrate, a second conductivity-type semiconductor layer 3a positioned on the first conductivity-type gate layer, a second conductivity-type source region 5 formed so as to sandwich a channel region 7 on the second conductivity-type semiconductor layer on a plane and a second conductivity-type drain region 6. The gap between the first conductivity-type gate layer 2 and the second conductivity-type source region 5 is smaller than the gap between the first conductivity-type gate layer 2 and the second conductivity-type drain region 6.
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