发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which cam realize desired circuit operations writing specified data on a finished product and which has MOS transistors which can be destructed by a simple wiring circuit without damaging other elements. SOLUTION: The semiconductor device is provided with a first MOS transistor 312 of a first conductivity which is formed on the surface of a semiconductor substrate, several second MOS transistors 110 of the first conductivity which are formed on the surface of the same semiconductor substrate for the first MOS transistor 312 and exhibit a breakdown voltage between their drain and source lower than the breakdown voltage between the drain and the source of the first MOS transistor 312 and a writing circuit 200, which applies an overvoltage to between at least one drain and source, selected from the several second MOS transistors 110 and destructs at least one second MOS transistor 110.
申请公布号 JP2002246472(A) 申请公布日期 2002.08.30
申请号 JP20010041796 申请日期 2001.02.19
申请人 KAWASAKI MICROELECTRONICS KK;ANASEM INC 发明人 ARIYOSHI RYUJI;KUNO ISAMU;FUKUSHIMA TAKAKIMI;AOIKE JUNJI
分类号 H01L21/316;H01L21/76;H01L21/82;H01L21/822;H01L21/8234;H01L27/04;H01L27/08;H01L27/088;H01L27/10;(IPC1-7):H01L21/82;H01L21/823 主分类号 H01L21/316
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